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EN29GL064AT Datasheet(PDF) 14 Page - Eon Silicon Solution Inc.

Part No. EN29GL064AT
Description  64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN29GL064AT Datasheet(HTML) 14 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
14
EN29GL064AT/B
Rev. B, Issue Date: 2011/04/12
Program/Erase Operations
These devices are capable of several modes of programming and or erase operations which are
described in detail in the following sections.
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing
address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data
is latched on the 1st rising edge of WE# or CE#.
Note the following:
• When the Embedded Program algorithm is complete, the device returns to the read mode.
• The system can determine the status of the program operation by reading the DQ status bits. Refer
to the Write Operation Status on page 28 for information on these status bits.
• An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.”
• Only erase operations can convert a “0” to a “1.”
• Any commands written to the device during the Embedded Program/Erase are ignored except the
Suspend commands.
• Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is
in progress.
• A hardware reset and/or power removal immediately terminates the Program/Erase operation and
the Program/Erase command sequence should be reinitiated once the device has returned to the
read mode to ensure data integrity.
• Programming is allowed in any sequence and across sector boundaries for single word
programming
operation.
• Programming to the same word address multiple times without intervening erases is permitted.
Single Word Programming
Single word programming mode is one method of programming the Flash. In this mode, four Flash
command write cycles are used to program an individual Flash address. The data for this programming
operation could be 8 or 16-bits wide.
While the single word programming method is supported by most devices, in general Single Word
Programming is not recommended for devices that support Write Buffer Programming.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by
reading the DQ status bits.
• During programming, any command (except the Suspend Program command) is ignored.
• The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program
operation is in progress.
• A hardware reset immediately terminates the program operation. The program command sequence
should be reinitiated once the device has returned to the read mode, to ensure data integrity.
• Programming to the same address multiple times continuously (for example, “walking” a bit within a
word) is permitted.


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