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EN29GL064AT Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN29GL064AT Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
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This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.eonssi.com or modifications due to changes in technical specifications. 1 EN29GL064AT/B Rev. B, Issue Date: 2011/04/12 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 70 ns • 8-word/16-byte page read buffer • 16-word/32-byte write buffer reduces overall programming time for multiple-word updates • Secured Silicon Sector region - 128-word/256-byte sector for permanent, secure identification through an 8-word/16- byte random Electronic Serial Number - Can be programmed and locked at the factory or by the customer • Flexible Sector Architecture: - Boot sector models: Eight 8-Kbyte boot sectors on Top or Bottom and one hundred twenty-seven 32Kword / 64Kbyte sectors. • Suspend and Resume commands for Program and Erase operations • Write operation status bits indicate program and erase operation completion • Support for CFI (Common Flash Interface) • Persistent methods of Advanced Sector Protection • WP#/ACC input - Accelerates programming time (when VHH is applied) for greater throughput during system production - Protects first or last sector regardless of sector protection settings • Hardware reset input (RESET#) resets device • Ready/Busy# output (RY/BY#) detects program or erase cycle completion • Minimum 100K program/erase endurance cycles. • Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm TFBGA • Industrial Temperature Range. GENERAL DESCRIPTION The EN29GL064AT/B offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It features a Write Buffer that allows a maximum of 16 words/32 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption. EN29GL064AT/B 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only |
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