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EN29GL064AT Datasheet(PDF) 52 Page - Eon Silicon Solution Inc.

Part # EN29GL064AT
Description  64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN29GL064AT Datasheet(HTML) 52 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
52
EN29GL064AT/B
Rev. B, Issue Date: 2011/04/12
TABLE 22. ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
0.1
2
sec
Chip Erase Time
16
60
sec
Excludes 00h programming prior
to erasure
Byte Programming Time
8
200
µs
Word Programming Time
8
200
µs
Byte
67.2
201.6
Chip Programming
Time
Word
33.6
100.8
sec
Total Write Buffer time
100
ACC Total Write Buffer time
60
µs
Excludes system level overhead
Erase/Program Endurance
100K
cycles
Minimum 100K cycles
Notes:
1. Typical program and erase times assume the following conditions: room temperature, 3V and check board
pattern programmed.
2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles.
Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Note:
Test conditions are Temperature = 25°C and f = 1.0 MHz.
Table 24. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Data Retention Time
125°C
20
Years


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