 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
EN29GL064AT Datasheet(PDF) 47 Page - Eon Silicon Solution Inc. |
|
||||||||||||||||||||||||||||||
EN29GL064AT Datasheet(HTML) 47 Page - Eon Silicon Solution Inc. |
|
|
47 / 58 page 
This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.eonssi.com or modifications due to changes in technical specifications. 47 EN29GL064AT/B Rev. B, Issue Date: 2011/04/12 AC CHARACTERISTICS Table 21. Write (Erase/Program) Operations Alternate CE# Controlled Writes Parameter Symbols Speed JEDEC Standard Description -70 Unit tAVAV tWC Write Cycle Time Min 70 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 30 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time before Write (OE# High to CE# Low) Min 0 ns tWLEL tWS WE# SetupTime Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP Write Pulse Width Min 35 ns tEHEL tCPH Write Pulse Width High Min 20 ns Write Buffer Program Operation (Note 2, 3) Typ 100 µs Typ 8 µs tWHWH1 tWHWH1 Programming Operation (Byte AND word mode) Max 200 µs Typ 0.1 s tWHWH2 tWHWH2 Sector Erase Operation Max 2 s Notes: 1. Not 100% tested. 2. See table.22 Erase and Programming Performance for more information. 3. For 1~16 words bytes programmed. |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
