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EN29GL064AT Datasheet(PDF) 46 Page - Eon Silicon Solution Inc. |
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EN29GL064AT Datasheet(HTML) 46 Page - Eon Silicon Solution Inc. |
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46 / 58 page 
This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.eonssi.com or modifications due to changes in technical specifications. 46 EN29GL064AT/B Rev. B, Issue Date: 2011/04/12 AC CHARACTERISTICS Table 20. Write (Erase/Program) Operations Parameter Symbols Speed JEDEC Standard Description -70 Unit tAVAV tWC Write Cycle Time Min 70 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 ns tDVWH tDS Data Setup Time Min 30 ns tWHDX tDH Data Hold Time Min 0 ns Read MIn 0 ns tOEH Output Enable Hold Time Toggle and DATA# Polling Min 10 ns tGHWL tGHWL Read Recovery Time before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# SetupTime Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWHDL tWPH Write Pulse Width High Min 20 ns Write Buffer Program Operation (Note 2, 3) Typ 100 µs Typ 8 µs tWHWH1 tWHWH1 Programming Operation (Word AND Byte Mode) Max 200 µs Typ 0.1 s Sector Erase Operation Max 2 s tWHWH2 tWHWH2 Chip Erase Operation Typ 16 s tVHH VHH Rise and Fall Time Min 250 ns tVCS Vcc Setup Time Min 50 µs t B BUSY WE# High to RY/BY# Low Max 70 ns tRB Recovery Time from RY/BY# Min 0 ns Notes: 1. Not 100% tested. 2. See table.22 Erase and Programming Performance for more information. 3. For 1~16 words bytes programmed. |
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