Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

EN29GL064AT Datasheet(PDF) 37 Page - Eon Silicon Solution Inc.

Part No. EN29GL064AT
Description  64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
Download  58 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
Logo 

EN29GL064AT Datasheet(HTML) 37 Page - Eon Silicon Solution Inc.

Zoom Inzoom in Zoom Outzoom out
 37 / 58 page
background image
This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
37
EN29GL064AT/B
Rev. B, Issue Date: 2011/04/12
Table 13. EN29GL064AT/B Command Definitions
Bus Cycles
1
P
st
P
Cycle
2
P
nd
P
Cycle
3
P
rd
P
Cycle
4
P
th
P
Cycle
5
P
th
P
Cycle
6
P
th
P
Cycle
Command
Sequence
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
1
RA
RD
Reset
1
XXX
F0
000
7F
Word
555
2AA
555
100
1C
000
7F
Manufacturer
ID
Byte
4
AAA
AA
555
55
AAA
90
200
1C
Word
555
2AA
555
X01
227E
X0E
2210
X0F
2201
Device ID
Top Boot
Byte
4
AAA
AA
555
55
AAA
90
X02
7E
X1C
10
X1E
01
Word
555
2AA
555
X01
227E
X0E
2210
X0F
2200
Device ID
Bottom Boot
Byte
4
AAA
AA
555
55
AAA
90
X02
7E
X1C
10
X1E
00
00
Word
555
2AA
555
(SA)
X02
01
00
Sector Protect
Verify
Byte
4
AAA
AA
555
55
AAA
90
(SA)
X04
01
Word
555
2AA
555
Program
Byte
4
AAA
AA
555
55
AAA
A0
PA
PD
Word
555
2AA
Write to Buffer
Byte
6
AAA
AA
555
55
SA
25
SA
WC
PA
PD
WBL
PD
Word
Program Buffer to
Flash
Byte
1
PA
29
Word
555
2AA
555
Write to Buffer
Abort Reset
Byte
3
AAA
AA
555
55
555
F0
Word
555
2AA
555
555
2AA
555
Chip Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Word
555
2AA
555
555
2AA
Sector Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Erase/Program Suspend
1
XXX
B0
Erase/Program Resume
1
XXX
30
Secured Silicon Sector Entry
3
555
AA
2AA
55
555
88
Secured Silicon Sector Exit
4
555
AA
2AA
55
555
90
XX
00
Word
55
CFI Query
Byte
1
AA
98
Accelerated Program
2
XX
A0
PA
PD
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits Amax–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1 and maximum value is 31 for word and byte mode.


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49  50  51  52  53  54  55  56  57  58 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn