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EN29GL064AT Datasheet(PDF) 17 Page - Eon Silicon Solution Inc. |
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EN29GL064AT Datasheet(HTML) 17 Page - Eon Silicon Solution Inc. |
17 / 58 page ![]() This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.eonssi.com or modifications due to changes in technical specifications. 17 EN29GL064AT/B Rev. B, Issue Date: 2011/04/12 Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices are capable of handling multiple write buffer programming operations on the same write buffer address range without intervening erases. Use of the write buffer is strongly recommended for programming when multiple words are to be programmed. Figure 5. Write Buffer Programming Operation |
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