This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
17
EN29GL064AT/B
Rev. B, Issue Date: 2011/04/12
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash
devices are capable of handling multiple write buffer programming operations on the same write buffer
address range without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
Figure 5. Write Buffer Programming Operation
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