EN25S16 datasheet(22/58 Pages) EON

Part #	EN25S16

Description	16 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

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Manufacturer	EON [Eon Silicon Solution Inc.]

Direct Link	http://www.essi.com.tw

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This Data Sheet may be revised by subsequent versions

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or modifications due to changes in technical specifications.

22

EN25S16

Rev. H, Issue Date: 2011/12/16

Figure 11.1 Write Status Register Instruction Sequence under EQPI Mode

Read Data Bytes (READ) (03h)

The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data

Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the

rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial

Data Output (DO), each bit being shifted out, at a maximum frequency fR, during the falling edge of

Serial Clock (CLK).

The instruction sequence is shown in Figure 12. The first byte addressed can be at any location. The

address is automatically incremented to the next higher address after each byte of data is shifted out.

The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When

the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence

to be continued indefinitely.

The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select

(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,

while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the

cycle that is in progress.

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