2

RF Device Data

Freescale Semiconductor, Inc.

AFT05MS031NR1 AFT05MS031GNR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +40

Vdc

Gate--Source Voltage

--6.0, +12

Vdc

Operating Voltage

17, +0

Vdc

Storage Temperature Range

--65 to +150

°C

Derate above 25°C

294

1.47

W

W/°C

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.67

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2500 V

Machine Model (per EIA/JESD22--A115)

A, passes 100 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

2

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate--Source Leakage Current

—

—

600

nAdc

On Characteristics

Gate Threshold Voltage

1.6

2.1

2.6

Vdc

Drain--Source On--Voltage

—

0.13

—

Vdc

Forward Transconductance

—

5.8

—

S

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

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