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ECS2516AFCN-A Datasheet(PDF) 7 Page - Elpida Memory |
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ECS2516AFCN-A Datasheet(HTML) 7 Page - Elpida Memory |
7 / 48 page ECS2516AFCN-A Preliminary Data Sheet E0986E20 (Ver. 2.0) 7 AC Characteristics (TA = 0 to +85 °C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V) 133MHz Parameter Symbol min. max. Unit Notes System clock cycle time (CL = 2) tCK 10 — ns 1 (CL = 3) tCK 7.5 — ns 1 CLK high pulse width tCH 2.5 — ns 1, 5 CLK low pulse width tCL 2.5 — ns 1, 5 Access time from CLK tAC — 5.4 1, 2, 5 Data-out hold time tOH 3 — ns 1, 2, 5 CLK to Data-out low impedance tLZ 0 — ns 1, 2, 3, 5 CLK to Data-out high impedance tHZ — 5.4 ns 1, 4 Input setup time tSI 1.5 — ns 1, 5 Input hold time tHI 0.8 — ns 1, 5 Ref/Active to Ref/Active command period tRC 67.5 — ns 1 Active to Precharge command period tRAS 45 120000 ns 1 Active command to column command (same bank) tRCD 20 — ns 1 Precharge to active command period tRP 20 — ns 1 Write recovery or data-in to precharge lead time tDPL 15 — ns 1 Last data into active latency tDAL 2CLK + 20ns — Active (a) to Active (b) command period tRRD 15 — ns 1 Transition time (rise and fall) tT 0.5 5 ns Refresh period (8192 refresh cycles) tREF — 64 ms Notes: 1. AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 1.4V. 2. Access time is measured at 1.4V. Load condition is CL = 50pF. 3. tLZ (min.) defines the time at which the outputs achieves the low impedance state. 4. tHZ (max.) defines the time at which the outputs achieves the high impedance state. 5. If tT ≥ 1ns, each parameters is changed as follows; tAC, tOH, tLZ: should be added (tT (rise)/2 – 0.5) tCH, tCL, tSI, tHI: should be added {(tT (rise) + tT (fall))/2 – 1} |
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