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ELM34814AA-N Datasheet(PDF) 2 Page - ELM Technology Corporation |
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ELM34814AA-N Datasheet(HTML) 2 Page - ELM Technology Corporation |
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2 / 4 page  2 ELM34814AA-N ■Electrical characteristics Parameter Symbol Condition Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V 30 V Zero gate voltage drain current Idss Vds=24V, Vgs=0V 1 μA Vds=20V, Vgs=0V, Tj=55°C 10 Gate-body leakage current Igss Vds=0V, Vgs=±20V ± 100 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.0 1.5 3.0 V On state drain current Id(on) Vgs=10V, Vds=5V 25 A 1 Static drain-source on-resistance Rds(on) Vgs=10V, Id=7A 15 23 mΩ 1 Vgs=4.5V, Id=6A 21 30 mΩ Forward transconductance Gfs Vds=15V, Id=5A 16 S 1 Diode forward voltage Vsd If=1A, Vgs=0V 1 V 1 Max.body-diode continuous current Is 3 A Pulsed current Ism 6 A 3 DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=15V, f=1MHz 830 pF Output capacitance Coss 185 pF Reverse transfer capacitance Crss 80 pF SWITCHING PARAMETERS Total gate charge Qg Vgs=5V, Vds=15V, Id=7A 9.0 13.0 nC 2 Gate-source charge Qgs 2.8 nC 2 Gate-drain charge Qgd 3.1 nC 2 Turn-on delay time td(on) Vgs=10V, Vds=15V, Id≈1A Rgen=6Ω 5.7 ns 2 Turn-on rise time tr 10.0 ns 2 Turn-off delay time td(off) 18.0 ns 2 Turn-off fall time tf 5.0 ns 2 Body diode reverse recovery time trr If=5A, dl/dt=100A/μs 15.5 ns Body diode reverse recovery charge Qrr 7.9 nC NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. Ta=25°C Dual N-channel MOSFET 4 - |
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