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ELM34804AA-N Datasheet(PDF) 2 Page - ELM Technology Corporation |
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ELM34804AA-N Datasheet(HTML) 2 Page - ELM Technology Corporation |
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2 / 4 page  2 ELM34804AA-N ■Electrical characteristics Parameter Symbol Condition Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V 60 V Zero gate voltage drain current Idss Vds=48V, Vgs=0V 1 μA Vds=40V, Vgs=0V, Tj=55°C 10 Gate-body leakage current Igss Vds=0V, Vgs=±20V ± 100 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.0 1.5 2.5 V On state drain current Id(on) Vgs=10V, Vds=5V 20 A 1 Static drain-source on-resistance Rds(on) Vgs=10V, Id=4.5A 42 55 mΩ 1 Vgs=4.5V, Id=4A 55 75 mΩ Forward transconductance Gfs Vds=10V, Id=4.5A 14 S 1 Diode forward voltage Vsd If=Is, Vgs=0V 1 V 1 Max.body-diode continuous current Is 1.3 A Pulsed current Ism 2.6 A 3 DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=25V, f=1MHz 650 pF Output capacitance Coss 80 pF Reverse transfer capacitance Crss 35 pF SWITCHING PARAMETERS Total gate charge Qg Vgs=10V, Vds=30V, Id=4.5A 12.5 18.0 nC 2 Gate-source charge Qgs 2.4 nC 2 Gate-drain charge Qgd 2.6 nC 2 Turn-on delay time td(on) Vgs=10V, Vds=30V, Id≈1A Rgen=6Ω 11 20 ns 2 Turn-on rise time tr 8 18 ns 2 Turn-off delay time td(off) 19 35 ns 2 Turn-off fall time tf 6 15 ns 2 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. Ta=25°C 4 - Dual N-channel MOSFET |
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