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ELM34416AA-N Datasheet(PDF) 1 Page - ELM Technology Corporation |
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ELM34416AA-N Datasheet(HTML) 1 Page - ELM Technology Corporation |
1 / 4 page 1 4 - ELM34416AA-N ■General description ■Features ■Maximum absolute ratings ■Thermal characteristics Parameter Symbol Typ. Max. Unit Note Maximum junction-to-case Steady-state Rθjc 25 °C/W Maximum junction-to-ambient Steady-state Rθja 50 Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V Gate-source voltage Vgs ± 20 V Continuous drain current Ta=25°C Id 11 A Ta=100°C 7 Pulsed drain current Idm 40 A 3 Avalanche current Las 28 A Avalanche energy L=0.1mH Eas 40 mJ Power dissipation Ta=25°C Pd 2.5 W Ta=100°C 1.0 Operating junction and storage temperature range Tj, Tstg -55 to 150 °C ELM34416AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • Vds=30V • Id=11A • Rds(on) < 12.0mΩ (Vgs=10V) • Rds(on) < 17.5mΩ (Vgs=4.5V) Single N-channel MOSFET ■Pin configuration ■Circuit SOP-8(TOP VIEW) Pin No. Pin name 1 SOURCE 2 SOURCE 3 SOURCE 4 GATE 5 DRAIN 6 DRAIN 7 DRAIN 8 DRAIN 4 3 2 1 5 6 7 8 S G D |
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