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SPD31N05 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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SPD31N05 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 8 page Semiconductor Group 2 30/Jan/1998 SPD31N05 SPU31N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤ 2 K/W Thermal resistance, junction - ambient (PCB mount)** RthJA ≤ 50 Thermal resistance, junction - ambient RthJA ≤ 100 IEC climatic category, DIN IEC 68-1 55 / 175 / 56 ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 55 - - V Gate threshold voltage VGS=VDS, ID = 50 µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C IDSS - - - - 0.1 - 100 1 0.1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 10 V, ID = 22 A RDS(on) - 0.03 0.04 Ω |
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