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TPS65155 Datasheet(PDF) 19 Page - Texas Instruments |
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TPS65155 Datasheet(HTML) 19 Page - Texas Instruments |
19 / 36 page ( ) ( ) ´ - - GH(MAX) AVDD F CE V = 2 V 2 × V V ( ) ( ) é ù ´ - ´ - ´ ë û Q AVDD F GH GH P = 2 V 2 V V I ´ D GH F P = I V TPS65155 www.ti.com SLVSB29 – JANUARY 2012 A current of the order of 1 mA through the feedback resistor network ensures good accuracy and increases the circuit's immunity to noise. It also ensures a minimum load on the charge pump, which reduces output voltage ripple under no-load conditions. A good approach is to assume a value of about 1.2 k for the lower resistor (R16) and then select the upper resistor (R15) to set the desired output voltage. Note that the maximum voltage in an application is determined by the boost converter's output voltage and the voltage drop across the diodes and PNP transistor. For a typical application in which the positive charge pump is configured as a voltage doubler, the maximum output voltage is given by Equation 6. (6) Where VAVDD is the output voltage of the boost converter, VF is the forward voltage of each diode and VCE is the collector-emitter voltage of the PNP transistor (recommended to be at least 1 V, to avoid transistor saturation). Selecting the PNP Transistor (Positive Charge Pump) The PNP transistor used to regulate VGH should have a DC gain (hFE) of at least 100 when its collector current is equal to the charge pump's output current. The transistor should also be able to withstand voltages up to VGH across its collector-emitter junction (VCE). The power dissipated in the transistor is given by Equation 7. The transistor must be able to dissipate this power without its junction becoming too hot. Note that the ability to dissipate power depends heavily on adequate PCB thermal design. (7) Where IGH is the mean (not RMS) output current drawn from the charge pump. A pull-up resistor is also required between the transistor's base and emitter. The value of this resistor is not critical, but it should be large enough not to divert significant current away from the base of the transistor. A value of 100 k Ω is suitable for most applications. Selecting the Diodes (Positive Charge Pump) Small-signal diodes can be used for most low current applications ( <50 mA) and higher rated diodes for higher power applications. The average current through the diode is equal to the output current, so that the power dissipated in the diode is given by Equation 8. (8) The peak current through the diode occurs during start-up and for a few cycles may be as high as a few amps. However, this condition typically lasts for <1 ms and can be tolerated by many diodes whose repetitive current rating is much lower. The diodes' reverse voltage rating should be equal to two times VAVDD. Table 3. Positive Charge Pump Diode Selection PART NUMBER IAVG IPK VR VF COMPONENT SUPPLIER BAV99W 150 mA 1 A for 1 ms 75 V 1 V at 50 mA NXP BAT54S 200 mA 600 mA for 1s 30 V 0.8 V at 100 mA Fairchild Semiconductor MBR0540 500 mA 5.5 A for 8 ms 40 V 0.51 at 500 mA Fairchild Semiconductor Selecting the Capacitors (Positive Charge Pump) For lowest output voltage ripple, low-ESR ceramic capacitors are recommended. The actual value is not critical and values in the range 1 µF to 10 µF are suitable for most applications. Larger capacitors provide better performance in applications where large load transient currents are present. A flying capacitor in the range 100 nF to 1 µF is suitable for most applications. Larger values experience a smaller voltage drop by the end of each switching cycle, and allow higher output voltages and/or currents to be achieved. Smaller values tend to be physically smaller and a bit cheaper. For best performance, it is recommended to include a resistor of a few ohms (2 Ω is a good value to start with) in series with the flying capacitor to limit peak currents occurring at the instant of switching. Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 19 Product Folder Link(s): TPS65155 |
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