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SMBT3906S Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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SMBT3906S Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 8 page SMBT 3906S Semiconductor Group Sep-07-1998 1 PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN) VPS05604 6 3 1 5 4 2 Type Marking Ordering Code Package Pin Configuration 1/4=E1/E2 s2A SMBT 3906S 2/5=B1/B2 3/6=C2/C1 SOT-363 Q62702-A1202 Maximum Ratings Unit Parameter Symbol Value Collector-emitter voltage VCEO V 40 40 Collector-base voltage VCBO Emitter-base voltage 6 VEBO DC collector current IC mA 200 250 mW Total power dissipation, TS = 115 °C Ptot °C Tj Junction temperature 150 Storage temperature Tstg - 65...+150 Thermal Resistance Junction ambient 1) RthJA ≤275 K/W Junction - soldering point RthJS ≤140 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 1998-11-01 |
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