OPA140A-DIE

SBOS610B – MARCH 2012 – REVISED MARCH 2012

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

BARE DIE INFORMATION

BACKSIDE

BOND PAD

BOND PAD

DIE THICKNESS

BACKSIDE FINISH

POTENTIAL

METALLIZATION COMPOSITION

THICKNESS

15 mils.

Silicon with backgrind

Floating

TiW/AlCu (0.5%)

1100 nm

Table 1. Bond Pad Coordinates in Microns

DISCRIPTION

PAD NUMBER

X MIN

Y MIN

X MAX

Y MAX

VIN

1

469.600

-720.500

544.600

-645.500

N/C

2

VIP

3

49.500

-430.500

124.500

-355.500

N/C

4

V-

5

1034.050

-124.550

1109.050

-49.550

OUT

6

1264.500

-107.500

1339.500

-32.500

V+

7

1264.500

-737.500

1339.500

-662.500

2

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