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DRV8832DRCT Datasheet(PDF) 2 Page - Texas Instruments |
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DRV8832DRCT Datasheet(HTML) 2 Page - Texas Instruments |
2 / 19 page Over- Temp OUT1 OUT2 GND IN1 VREF VSET VCC VCC VCC Battery DCM Gate Drive Integ. Comp + - Logic Ref Osc OCP VCC Gate Drive OCP IN2 Current Sense FAULTn ISENSE DRV8832 SLVSAB3F – MAY 2010 – REVISED FEBRUARY 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. DEVICE INFORMATION Functional Block Diagram 2 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated Product Folder Link(s): DRV8832 |
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