Over-

Temp

OUT1

OUT2

GND

IN1

VREF

VSET

VCC

VCC

VCC

Battery

DCM

Gate

Drive

Integ.

Comp

+

-

Logic

Ref

Osc

OCP

VCC

Gate

Drive

OCP

IN2

Current

Sense

FAULTn

ISENSE

DRV8832

SLVSAB3F

– MAY 2010 – REVISED FEBRUARY 2012

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

DEVICE INFORMATION

Functional Block Diagram

2

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© 2010–2012, Texas Instruments Incorporated

Product Folder Link(s): DRV8832