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SFH640 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. SFH640
Description  PHOTOTRANSISTOR 5.3 KV TRIOS HIGH BV CER VOLTAGE OPTOCOUPLER
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

SFH640 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

  SFH640 Datasheet HTML 1Page - Siemens Semiconductor Group SFH640 Datasheet HTML 2Page - Siemens Semiconductor Group SFH640 Datasheet HTML 3Page - Siemens Semiconductor Group  
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5–1
FEATURES
• CTR at IF=10 mA, VCE=10 V
SFH640-1, 40-80%
SFH640-2, 63-125%
SFH640-3*, 100-200%
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• Very High Collector-Emitter Breakdown Volt-
age, BVCER=300 V
• Isolation Test Voltage: 5300 VACRMS
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler
6 Pin DIP Package with Base Connection
• Field Effect Stable: TRIOS+
VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
DESCRIPTION
The SFH 640 is an optocoupler with very high
BVCER, a minimum of 300 volts. It is intended for
telecommunications applications or any DC appli-
cation requiring a high blocking voltage. The
SFH640 is a “better than” replacement for H11D1.
*Supplies from this group can't always be guranteed due
to unforseeable yield spread.
+TRIOSTRansparent IOn Shield
V
DE
SFH 640
PHOTOTRANSISTOR
5.3 KV TRIOS® HIGH BVCER VOLTAGE
OPTOCOUPLER
Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage ...................................................................................6 V
DC Forward Current ....................................................................... 60 mA
Surge Forward Current (tp
≤10 µs) .................................................. 2.5 A
Total Power Dissipation ............................................................... 100 mW
Detector
Collector-Emitter Voltage ................................................................ 300 V
Collector-Base Voltage .....................................................................300 V
Emitter-Base Voltage ..........................................................................7 V
Collector Current ........................................................................... 50 mA
Surge Collector Current (tp
≤1 ms) ............................................... 100 mA
Total Power Dissipation ............................................................... 300 mW
Package
Isolation Test Voltage (between emitter and
detector, refer to climate DIN 40046 part 2
Nov. 74) ...................................................... 5300 VACRMS/7500 VACPK
Isolation Resistance
VIO=500 V, TA=25°C .........................................................................≥10
12
VIO=500 V, TA=100°C.......................................................................≥10
11
Insulation Thickness between Emitter and Detector ..................
≥0.4 mm
Creepage
.................................................................................................≥7 mm
Clearance
.................................................................................................≥7 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ................................................... 175
Storage Temperature Range .......................................... -55
°C to +150°C
Operating Temperature Range....................................... -55
°C to +100°C
Junction Temperature...................................................................... 100
°C
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane
≥1.5 mm) .............................................260°C
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID
6
5
4
1
2
3
18
° typ.
.300 (7.62)
.347 (8.82)
4
°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC


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