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N-80EPU12 Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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N-80EPU12 Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 6 page Page 1 of 6 SEMICONDUCTOR N-80EPU12 Series RoHS RoHS Ultrafast Soft Recovery Diode, 80 A FEATURES Ultrafast recovery 175 °C operating junction temperature Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage 1200 Continuous forward current lF(AV) TC = 110 °C 80 A Single pulse forward current lFSM 610 Maximum repetitive forward current lFRM Square wave, 20 kHz Operating junction and storage temperatures - 55 to 175 ELECTRICAL SPECIFICATIONS (TJ = 25 unless otherwise specified) ºC PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V Forward voltage Reverse leakage current Junction capacitance PRODUCT SUMMARY TO-247AC modified Cathode IF(AV) trr VR 1 2 Anode 3 Anode Cathode 35 ns 80 A 1200 V 2 Anode to base Cathode to base 1 3 TO-247AB pF µA °C Nell High Power Products - - - - FRED N-80EPU12 N-80APU12 VR T , T j Stg TC = 25 °C 129 V VBR, Vr VF lR CT l = 100µA R 1200 - - l = 80A F l = 160A F l = 80A, T = 125°C F J V = R V rated R T = 150°C, J V = V rated R R V = 200V R 2.8 3.3 3.3 2.1 - - 100 500 50 - - - - - - |
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