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10T08AB Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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10T08AB Datasheet(HTML) 5 Page - Nell Semiconductor Co., Ltd |
5 / 6 page -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 I ,I ,I [T ] / GT H L j I ,I ,I [T =25°C ] GT H L j 0.1 1.0 10.0 100.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0 1 2 3 4 5 6 (dI/dt)c [T ] / pecified] j (dI/dt)c [T s j SEMICONDUCTOR 10T Series RoHS RoHS Fig.7 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values) Fig.8 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) Fig.9 Relative variation of critical rate of decrease of main current versus junction temperature Page 5 of 6 lGT I &I H L T (°C) j C B BW/CW (dV/dt)c (V/µs) T (°C) j 0 25 50 75 100 125 www.nellsemi.com |
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