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SFH601 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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SFH601 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
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5–4 SFH601 Figure 15. Saturation voltage versus collector current and modulation depth SFH601-3 VCEsat=f (IC) (TA=25°C) Figure 16. Saturation voltage versus collector current and modulation depth SFH601-4 VCEsat=f (IC) (TA=25°C) Figure 17. Permissible pulse load D=parameter, TA=25°C, IF=f (tp) Figure 18. Permissible power dissi- pation for transistor and diode Ptot=f (TA) Figure 19. Permissible forward cur- rent diode Ptot=f (TA) Figure 20. Transistor capacitance C=f(VO) (TA=25°C, f=1 MHz) |
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