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SFH601 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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SFH601 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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5–1 FEATURES • High Current Transfer Ratios SFH601-1, 40 to 80% SFH601-2, 63 to 125% SFH601-3 ,100 to 200% SFH601-4, 160 to 320% • Isolation Test Voltage (1 Sec.), 5300 VACRMS • VCEsat 0.25 ( ≤0.4) V, IF=10 mA, IC=2.5 mA • Built to conform to VDE Requirements • Highest Quality Premium Device • Long Term Stability • Storage Temperature, –55 ∞ to +150∞C • Underwriters Lab File #E52744 • CECC Approved • VDE 0884 Available with Option 1 DESCRIPTION The SFH601 is an optocoupler with a Gallium Ars- enide LED emitter which is optically coupled with a silicon planar phototransistor detector. The compo- nent is packeged in a plastic plug-in case 20 AB DIN 41866. The coupler transmits signals between two electri- cally isolated circuits. Maximum Ratings Emitter Reverse Voltage................................................. 6 V DC Forward Current...................................... 60 mA Surge Forward Current (tp=10 µs).................. 2.5 A Total Power Dissipation.............................. 100 mW Detector Collector-Emitter Voltage .............................. 100 V Emitter-Base Voltage ......................................... 7 V Collector Current........................................... 50 mA Collector Current (t=1 ms) .......................... 100 mA Power Dissipation ...................................... 150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) (t=1 sec.) ..............5300 VACRMS Creepage ........................................................... ≥7 mm Clearance .......................................................... ≥7 mm Isolation Thickness between Emitter and Detector ....................................................... ≥0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1........................175 Isolation Resistance VIO=500 V, TA=25°C................................... ≥10 12 Ω VIO=500 V, TA=100°C................................. ≥10 11 Ω Storage Temperature Range........ –55 °C to +150°C Ambient Temperature Range....... –55 °C to +100°C Junction Temperature ....................................100 °C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane ≥1.5 mm) ..........260°C V DE Characteristics (TA=25°C) *TRIOS—TRansparent IOn Shield Symbol Unit Condition Emitter Forward Voltage VF 1.25 ( ≤1.65) VIF=60 mA Breakdown Voltage VBR ≥6V IR=10 µA Reverse Current IR 0.01 ( ≤10) µAV R=6 V Capacitance CO 25 pF VF=0 V, f=1 MHz Thermal Resistance RTHJamb 750 °C/W Detector Capacitance Collector-Emitter Collector-Base Emitter-Base CCE CCB CEB 6.8 8.5 11 pF f=1 MHz VCE=5 V VCB=5 V VEB=5 V Thermal Resistance RTHJamb 500 °C/W Package Saturation Voltage, Collector-Emitter VCEsat 0.25 ( ≤0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CIO 0.6 pF VI-O=0, f=1 MHz Dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) Pin One ID 6 5 4 1 2 3 18 ° typ. .300 (7.62) .347 (8.82) 4 ° typ. 1 2 3 6 5 4 Base Collector Emitter Anode Cathode NC SFH601 SERIES TRIOS®* PHOTOTRANSISTOR OPTOCOUPLER This document was created with FrameMaker 4.0.4 |
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