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SFH600 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. SFH600
Description  TRIOS PHOTOTRANSISTOR OPTOCOUPLER
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

SFH600 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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5–1
FEATURES
• High Current Transfer Ratios
SFH600-0, 40 to 80%
SFH600-1, 63 to 125%
SFH600-2, 100 to 200%
SFH600-3, 160 to 320%
• Isolation Test Voltage (1 Sec.), 5300 VACRMS
• VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA
• High Quality Premium Device
• Long Term Stability
• Storage Temperature, –55
∞ to +150∞C
• Underwriters Lab File #E52744
VDE 0884 Available with Option 1
DESCRIPTION
The SFH600 is an optocoupler with a GaAs LED
emitter which is optically coupled with a silicon pla-
nar phototransistor detector. The component is
packaged in a plastic plug-in case, 20 AB DIN
41866.
The coupler transmits signals between two electri-
cally isolated circuits. The potential difference
between the circuits to be coupled is not allowed to
exceed the maximum permissible insulating volt-
age.
Maximum Ratings
Emitter
Reverse Voltage................................................. 6 V
DC Forward Current...................................... 60 mA
Surge Forward Current (tp=10 µs).................. 2.5 A
Total Power Dissipation.............................. 100 mW
Detector
Collector-Emitter Voltage ................................ 70 V
Emitter-Base Voltage ....................................... 7 V
Collector Current........................................... 50 mA
Collector Current (t=1 ms) .......................... 100 mA
Power Dissipation ...................................... 150 mW
Package
Isolation Test Voltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1 sec.) ..............5300 VACRMS
Creepage......................................................
≥7 mm
Clearance
.......................................................... ≥7 mm
Isolation Thickness between Emitter &
Detector .....................................................
≥0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1........................175
Isolation Resistance
VIO=500 V, TA=25°C................................... ≥10
12
VIO=500 V, TA=100°C................................. ≥10
11
Storage Temperature Range........ –55
°C to +150°C
Ambient Temperature Range....... –55
°C to +100°C
Junction Temperature ....................................100
°C
Soldering Temperature (max. 10 s, dip
soldering: distance to seating plane
≥1.5 mm) ....................................................260°C
V
DE
Characteristics (TA=25°C)
*TRIOS—TRansparent IOn Shield
Symbol
Unit
Condition
Emitter
Forward Voltage
VF
1.25 (
≤1.65)
V
IF=60 mA
Breakdown Voltage
VBR
≥6V
IR=10 µA
Reverse Current
IR
0.01 (
≤10)
µAV
R=6 V
Capacitance
CO
25
pF
VF=0 V, f=1 MHz
Thermal Resistance
RTHJamb
750
°C/W
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
CCE
CCB
CEB
5.2
6.5
9.5
pF
f=1 MHz
VCE=5 V
VCB=5 V
VEB=5 V
Thermal Resistance
RTHJamb
500
°C/W
Package
Saturation Voltage,
Collector-Emitter
VCEsat
0.25 (
≤0.4)
V
IF=10 mA,
IC=2.5 mA
Coupling Capacitance
CIO
0.6
pF
VIO=0, f=1 MHz
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID
6
5
4
1
2
3
18
° typ.
.300 (7.62)
.347 (8.82)
4
°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
SFH600 SERIES
TRIOS®* PHOTOTRANSISTOR
OPTOCOUPLER
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