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SFH409 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. SFH409
Description  GaAs Infrared Emitter
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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SFH409 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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Semiconductor Group
1
1997-11-01
GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
SFH 409
1) Nur auf Anfrage lieferbar.
1) Available only on request.
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
SFH 409
Q62702-P860
3-mm-LED-Gehäuse (T 1), grau eingefärbt, An-
schlüsse im 2.54-mm-Raster (1/10’’),
Kathodenkennzeichnung: kürzerer Anschluß
3 mm LED package (T 1), grey-colored epoxy resin,
solder tabs lead spacing 2.54 mm (1/10’’),
cathode marking: short lead
SFH 409-11)
Q62702-P1001
SFH 409-2
Q62702-P1002
Wesentliche Merkmale
q
GaAs-IR-Lumineszenzdiode, hergestellt im
Schmelzepitaxieverfahren
q
Hohe Zuverlässigkeit
q
Hohe Impulsbelastbarkeit
q
Gruppiert lieferbar
q
Gehäusegleich mit SFH 309, SFH 487
Anwendungen
q
Lichtschranken für Gleich- und
Wechsellichtbetrieb
q
IR Fernsteuerungen
Features
q
GaAs infrared emitting diode, fabricated in a
liquid phase epitaxy process
q
High reliability
q
High pulse handling capability
q
Available in groups
q
Same package as SFH 309, SFH 487
Applications
q
Photointerrupters
q
IR remote control of various equipment
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
1.8
1.2
29
27
6.3
5.9
(3.5)
4.1
3.9
5.2
4.5
0.6
0.4
4.0
3.6
0.6
0.4
Approx. weight 0.3 g
Chip position
Area not flat
GEX06250
Cathode
Anode
(SFH 487)
(SFH 409)


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