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SFH221 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # SFH221
Description  Silizium-Differential-Fotodiode Silicon Differential Photodiode
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

SFH221 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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SFH 221 S
Semiconductor Group
400
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
–40 ... +80
oC
Löttemperatur (Lötstelle 2 mm vom
Gehäuse entfernt bei Lötzeit t
≤ 3s)
Soldering temperature in 2 mm distance
from case bottom (t
≤ 3s)
TS
230
oC
Sperrspannung
Reverse voltage
VR
10
V
Isolationsspannung gegen Gehäuse
Insulation voltage vs. package
VIS
100
V
Verlustleistung, TA = 25
oC
Total power dissipation
Ptot
50
mW
Kennwerte (TA = 25
oC, Normlicht A, T = 2856 K) für jede Einzeldiode
Characteristics (TA = 25
oC, standard light A, T = 2856 K) per single diode
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit, VR = 5 V
Spectral sensitivity
S
24 (
≥ 15)
nA/Ix
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λ
S max
900
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ
400 ... 1100
nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
1.54
mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L x B
L x W
0.7 x 2.2
mm
Abstand Chipoberfläche zu Gehäuseober-
fläche
Distance chip front to case surface
H
1.1 ... 1.6
mm
Halbwinkel
Half angle
ϕ± 55
Grad
deg.


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