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SR502-G Datasheet(PDF) 1 Page - Comchip Technology |
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SR502-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 3 page SR502-G Thru. SR510-G Forward current: 5.0A Reverse voltage: 20 to 100V RoHS Device Schottky Barrier Rectifier QW-BB017 Page 1 REV:B Features -Fast switching. -Low forward voltage, high current capability. -Low power loss, high efficiency. -High current surge capability. -High temperature soldering guaranteed: 250°C/10 seconds, 0.375” (9.5mm) lead length at 5lbs (2.3kg) tension. Mechanical Data -Case: transfer molded plastic. -Epoxy: UL94V-0 rate flame retardant. -Polarity: color band denoted cathode end. -Lead: plastic axial lead, solderable per MIL-STD- 202E, method 208C. -Mounting position: any. -Weight: 1.27 gram. Dimensions in inches and (millimeter) DO-27 1.0(25.4) min. 1.0(25.4) min. 0.375(9.50) 0.335(8.50) 0.220(5.60) 0.197(5.00) 0.052(1.30) 0.048(1.20) Parameter Unit Maximum Ratings and Electrical Characteristics Rating At 25°C ambient temperature unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current, 0.375” (9.5mm) lead length Peak forward surge current, 8.3ms single half sine- wave, superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at IF=5.0A Maximum DC reverse current at rated DC blocking voltage per element (Note 1) Typical thermal resistance Operating junction temperature range Storage temperature range Symbol TL=60°C (SR502-G ~ SR504-G) TL=85°C (SR505-G ~ SR508-G) VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJA TJ TSTG SR502 -G SR503 -G SR504 -G SR505 -G SR506 -G SR508 -G 20 14 20 30 21 30 0.55 550 40 28 40 50 35 50 60 42 60 80 57 80 5.0 150 1.0 50 15 -55 ~ +150 0.75 0.85 450 -55 ~ +150 V V V A A V mA pF °C/W °C °C Note: 1. Pulse pulse: 300μS pulse width, 1% duty cycle. SR510 -G 100 70 100 350 (Note 1) See Fig.1 TA=25°C TA=100°C Typical junction capacitance (Measured at 1.0Hzand applied reverse voltage of 4.0V) |
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