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P4KE10-G Datasheet(PDF) 1 Page - Comchip Technology |
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P4KE10-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 6 page P4KE-G Series Stand-off Voltage: 6.8 ~ 600V Power Dissipation: 400 Watts RoHS Device 400W Transient Voltage Suppressor QW-BTV05 Page 1 REV:B Symbol Parameter Value Unit Maximum Ratings and Electrical Characteristics Rating at 25°C ambient unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Peak power dissipation a 10/1000 waveform μs (Note 1) Features -Glass passivated chip -Low leakage -Uni and Bidirection unit -Excellent clamping capability -The plastic material has UL recognition 94V-0 -Fast response time: typically less than 1.0pS from 0 volts to BV min Mechanical Data -Case: Molded plastic DO-41 -Polarity: By cathode band denotes unidirectional device none cathode band denoted bi-directional device -Weight: 0.34 grams Dimensions in inches and (millimeter) DO-41 O C Maximum instantaneous forward voltage at 25A for unidirectional only (Note 3) Operating junction and storage temperature range PPP 40 400 3.5/5.0 -55 to +150 W A V OC 0.033(0.84) 0.028(0.71) DIA. 0.117(2.97) 0.090(2.29) DIA. 0.205(5.21) 0.165(4.19) 1.000(25.40) MIN. 1.000(25.40) MIN. Peak forward surge current, 8.3mS single half sine-wave unidirectional only(Note 2) NTOES: O (1) Non-repetitive current pulse, per fig.5 and derated above TA=25 C per fig. 1. (2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum. (3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V. IFSM VF TJ, TSTG Peak pulse current with a 10/1000 waveform μs (Note 1) IPP See Next Table A Power dissipation on infinite heatsink at TL=75 PD 1.0 W |
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