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AD8421BRMZ-R7 Datasheet(PDF) 5 Page - Analog Devices

Part # AD8421BRMZ-R7
Description  3 nV/?숰z, Low Power
Download  28 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD8421BRMZ-R7 Datasheet(HTML) 5 Page - Analog Devices

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Data Sheet
AD8421
Rev. 0 | Page 5 of 28
AR Grade
BR Grade
Parameter
Test Conditions/
Comments
Min
Typ
Max
Min
Typ
Max
Unit
POWER SUPPLY
Operating Range
Dual supply
±2.5
±18
±2.5
±18
V
Single supply
5
36
5
36
V
Quiescent Current
2
2.3
2
2.3
mA
Over Temperature
TA = −40°C to +85°C
2.6
2.6
mA
TEMPERATURE RANGE
For Specified Performance
−40
+85
−40
+85
°C
Operational5
−40
+125
−40
+125
°C
1 Total voltage noise = √(eni2 + (eno/G)2 + eRG2). See the Th
section for more information.
eory of Operation
2 Total RTI VOS = (VOSI) + (VOSO/G).
3 These specifications do not include the tolerance of the external gain setting resistor, RG. For G > 1, add RG errors to the specifications given in this table.
4 Input voltage range of the AD8421 input stage only. The input range can depend on the common-mode voltage, differential voltage, gain, and reference voltage.
See the
section for more details.
Input Voltage Range
5 See the
section for expected operation between 85°C and 125°C.
Typical Performance Characteristics
ARM AND BRM GRADES
Table 2.
ARM Grade
BRM Grade
Parameter
Test Conditions/
Comments
Min
Typ
Max
Min
Typ
Max
Unit
COMMON-MODE REJECTION
RATIO (CMRR)
CMRR DC to 60 Hz with 1 kΩ
Source Imbalance
VCM = −10 V to +10 V
G = 1
84
92
dB
G = 10
104
112
dB
G = 100
124
132
dB
G = 1000
134
140
dB
Over Temperature, G = 1
TA = −40°C to +85°C
80
90
dB
CMRR at 20 kHz
VCM = −10 V to +10 V
G = 1
80
80
dB
G = 10
90
90
dB
G = 100
100
100
dB
G = 1000
100
100
dB
NOISE
Voltage Noise, 1 kHz1
VIN+, VIN− = 0 V
Input Voltage Noise, eni
3
3.2
3
3.2
nV/√Hz
Output Voltage Noise, eno
60
60
nV/√Hz
Peak to Peak, RTI
f = 0.1 Hz to 10 Hz
G = 1
2
2
2.2
μV p-p
G = 10
0.5
0.5
μV p-p
G = 100 to 1000
0.07
0.07
0.09
μV p-p
Current Noise
Spectral Density
f = 1 kHz
200
200
fA/√Hz
Peak to Peak, RTI
f = 0.1 Hz to 10 Hz
18
18
pA p-p
VOLTAGE OFFSET2
Input Offset Voltage, VOSI
VS = ±5 V to ±15 V
70
50
μV
Over Temperature
TA = −40°C to +85°C
135
135
μV
Average TC
0.9
0.9
μV/°C
Output Offset Voltage, VOSO
600
400
μV
Over Temperature
TA = −40°C to +85°C
1
1
mV
Average TC
9
9
μV/°C


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