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MCM6729 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MCM6729
Description  256K x 4 Bit Fast Static Random Access Memory
Download  8 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MCM6729 Datasheet(HTML) 2 Page - Motorola, Inc

   
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MCM6729
2
MOTOROLA FAST SRAM
TRUTH TABLE (X = Don’t Care)
E
G
W
Mode
VCC Current
Output
Cycle
H
X
X
Not Selected
ISB1, ISB2
High–Z
L
H
H
Output Disabled
ICCA
High–Z
L
L
H
Read
ICCA
Dout
Read Cycle
L
X
L
Write
ICCA
High–Z
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
– 0.5 to + 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current
Iout
±30
mA
Power Dissipation
PD
1.2
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
4.5
5.0
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3**
V
Input Low Voltage
VIL
– 0.5
*
0.8
V
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Ilkg(I)
± 1.0
µA
Output Leakage Current (E = VIH, Vout = 0 to VCC)
Ilkg(O)
± 1.0
µA
Output Low Voltage (IOL = + 8.0 mA)
VOL
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
V
POWER SUPPLY CURRENTS
Parameter
Symbol
MCM6729–10
MCM6729–12
Unit
Notes
AC Active Supply Current (Iout = 0 mA) (VCC = max, f = fmax)
ICCA
165
155
mA
1, 2, 3
Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz)
ICC2
90
90
mA
AC Standby Current (E = VIH, VCC = max, f = fmax)
ISB1
60
60
mA
1, 2, 3
CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V,
Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V)
ISB2
20
20
mA
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data states are all zero.
This device contains circuitry to protect the in-
puts against damage due to high static voltages
or electric fields; however, it is advised that nor-
mal precautions be taken to avoid application of
any voltage higher than maximum rated volt-
ages to these high–impedance circuits.
This BiCMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.


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