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CDST116-G Datasheet(PDF) 1 Page - Comchip Technology |
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CDST116-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 2 page CDST116-G RoHS Device SMD Switching Diode QW-B0029 Page 1 REV:A Features -Low leakage current applications. -Medium speed switching times. Polarity: Marking: JV Dimensions in inches and (millimeter) Parameter Value Unit Maximum Ratings (at Ta=25°C unless otherwise noted) Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current Power dissipation Junction temperature Storage temperature VRRM VRWM VR IFM PD TJ TSTG t 75 215 250 150 -55 to +150 V V mA mW OC OC SOT-23 3 1 2 0.119(3.00) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.083(2.10) 0.066(1.70) 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 0.006(0.15) max 0.007(0.20) min Symbol Parameter Conditions Min Max Unit Electrical Characteristics (at Ta=25°C unless otherwise noted) Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time IR=100μA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=0V, f=1MHz IF=IR=10mA, Irr=0.1×IR, RL=100Ω V(BR)R VF1 VF2 VF3 VF4 IR CT trr 75 V 0.9 1 1.1 1.25 5 3 V V V V V μA pF nS Typ. V 2 Symbol |
Similar Part No. - CDST116-G |
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Similar Description - CDST116-G |
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