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OBTS949 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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OBTS949 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 11 page 14.07.1998 Semiconductor Group Page 3 BTS 949 Electrical Characteristics Parameter Symbol Unit Values max. typ. min. at Tj=25°C, unless otherwise specified Characteristics - Drain source clamp voltage Tj = - 40 ...+ 150°C, ID = 10 mA 73 V VDS(AZ) 60 - IDSS - Off state drain current VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V 25 µA 1.7 2.2 VIN(th) 1.3 Input threshold voltage ID = 3,9 mA V - 100 µA IIN(1) - Input current - normal operation, ID<ID(lim): VIN = 10 V 400 Input current - current limitation mode, ID=ID(lim): VIN = 10 V 1000 IIN(2) - 3000 IIN(3) 1500 Input current - after thermal shutdown, ID=0 A: VIN = 10 V 6000 - - - - IIN(H) 500 300 Input holding current after thermal shutdown Tj = 25 °C Tj = 150 °C 18 30 22 44 m Ω RDS(on) - - On-state resistance ID = 19 A, VIN = 5 V, Tj = 25 °C ID = 19 A, VIN = 5 V, Tj = 150 °C 14 25 On-state resistance ID = 19 A, VIN = 10 V, Tj = 25 °C ID = 19 A, VIN = 10 V, Tj = 150 °C 18 36 RDS(on) - - - ID(ISO) 19 Nominal load current (ISO 10483) VIN = 10 V, VDS = 0.5 V, TC = 85 °C - A |
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