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OBTS949 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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OBTS949 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
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5 / 11 page  14.07.1998 Semiconductor Group Page 5 BTS 949 Block Diagramm Terms Inductive and overvoltage output clamp HITFET IN CC D V IN ID VDS 1 4 5 IIN 3 S Vbb RCC RL CC V HITFET V Z D S Short circuit behaviour The ground lead impedance of RCC should be as low as possible V IN ID I D(SCp) t 0 tm t 2 ID(Lim) t 1 Input circuit (ESD protection) IN ESD-ZDI Source ESD zener diodes are not designed for DC current > 2 mA @ VIN>10V. t0: Turn on into a short circuit tm : Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level wher the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. |
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