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DTB123Y Datasheet(PDF) 2 Page - Unisonic Technologies |
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DTB123Y Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page DTB123Y PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R220-019,B ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -50 V Input Voltage VIN -12 ~ +5 V Output Current IC -500 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL SPECIFICATIONS (Ta=25°C, unless others specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VIN(OFF) VCC =-5V, IOUT =-100μA -0.3 Input Voltage VIN(ON) VOUT =-0.3V, IOUT =-20mA -2 V Output Voltage VOUT(ON) IOUT/IIN =-50mA/-2.5mA -0.1 -0.3 V Input Current IIN VIN=-5V -3.0 mA Output Current IOUT(OFF) VCC =-50V, VIN =0V -0.5 μA DC Current Gain hFE VOUT =-5V, IOUT =-50mA 56 Input Resistance R1 1.54 2.2 2.86 KΩ Resistor Ratio R2/R1 3.6 4.5 5.5 Transition Frequency (Note) fT VCE =-10V, IE =50mA, f=100MHz 200 MHz Note: Transition frequency of the device |
Similar Part No. - DTB123Y_10 |
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Similar Description - DTB123Y_10 |
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