DTA123E

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-086,C

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

-50

V

Input Voltage

-12 ~ +10

V

Output Current

-100

mA

Power Dissipation

SOT-523

150

mW

SOT-23/SOT-323

200

mW

TO-92

625

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

-0.5

V

-3

Output Voltage

-0.1

-0.3

V

Input Current

-3.8

mA

Output Current

-0.5

μA

DC Current Gain

20

Input Resistance

1.54

2.2

2.86

KΩ

Resistance Ratio

0.8

1

1.2

Transition Frequency

250

MHz

Note: Transition frequency of the device