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CMPFCD86GN220 Datasheet(PDF) 1 Page - Champion Microelectronic Corp. |
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CMPFCD86GN220 Datasheet(HTML) 1 Page - Champion Microelectronic Corp. |
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1 / 5 page  CMPFCD86 PFC Diode (8A/600V) 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 1 FEATURES Fast switching for high efficiency Low noise Trr = 20ns Low reverse leakage current High voltage super FRD PFC application MECHANICAL DATA Case : Molded plastic TO-220AC / TO-220FP Epoxy : UL94V-0 rate flame retardant Terminals : Solder able per MIL-STD-202 method 208 Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave , 60Hz , resistive or inductive load. For capacitive load , derate current by 20% CMPFCD86 Symbol Characteristics Rating Unit VRRM Recurrent Peak Reverse Voltage 600 V VRMS RMS Voltage 420 V VDC DC Blocking Voltage 600 V IF(AV) Average Forward Rectified Current @Tc=140℃ 8.0 A IFSM Peak Forward Surge Current 8.3ms single half sine-wave Super imposed on rated load (JEDEC Method) 100 A IFSM Peak Forward Surge Current 1.0ms single Square-wave superimposed on rated load (JEDEC Method) 150 A VF Instantaneous Forward Voltage @8A 2.9 V 10 IR DC Reverse Current @TJ=25℃ At Rated DC Blocking Voltage @TJ=150℃ 500 uA Trr Maximum Reverse Recovery Time (note1) 20 nS CJ Typical Junction Capacitance (note2) 50 pF RθJC Typical Thermal Resistance (note3) 2.2 ℃ / W I 2 t I 2 t Value For Fusing Tp=10ms 91 A 2 s TJ Operating Temperature Range -65~175 ℃ TSTG Storage Temperature Range -65~175 ℃ Notes : 1. Reverse recovery test conditions IF=0.5A , IR=1.0A , Irr=0.25A 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts DC. 3. Thermal Resistance junction to case. |
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