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UP1868L-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UP1868L-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UP1868 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R207-015,A ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current IC(PEAK) -20 A Continuous Collector Current IC -6 A Power Dissipation PC 3 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (at Ta = 25℃ unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVCBO IC=-100µA -15 V BVCEO IC=-10mA -12 V Breakdown Voltage (Note) BVEBO IE=-100µA -6 V IC=-500mA,IB=-5mA -55 -100 mV IC=-2A, IB=-50mA -132 -160 mV Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=-6A, IB=-250mA -440 mV Base-Emitter Saturation Voltage VBE(SAT) IC=-6A, IB=-250mA -1050 -1200 mV Base-Emitter Turn-On Voltage (Note) VBE(ON) VCE=-1V, IC=-6A -950 -1050 mV VCB=-12V -10 nA Collector Cut-Off Current ICBO VCB=-12V,Ta=100℃ -1.0 µA Emitter Cut-Off Current IEBO VEB=-6V -10 nA hFE1 VCE=-1V , IC=-10mA 300 hFE2 VCE=-1V , IC=-500mA 300 1000 hFE3 VCE=-1V , IC=-5mA 200 DC Current Gain (Note) hFE4 VCE=-1V , IC=-10A 150 Current Gain Bandwidth Product fT VCE=-10V, IC=-100mA, f=50MHz 80 MHz Output Capacitance Cob VCB=-20V, f=1MHz 161 pF tON IC=-4A, IB1=-400mA 120 Switching Times tOFF IB2=400mA, VCC=-10V 116 ns Note: Pulse test: Pulse Width=300 µs, Duty Cycle≦2% |
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