UNISONIC TECHNOLOGIES CO., LTD

UF630

Power MOSFET

www.unisonic.com.tw

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Copyright © 2011 Unisonic Technologies Co., Ltd

QW-R502-049,F

200V, 9A N-CHANNEL

POWER MOSFET

DESCRIPTION

The N-Channel enhancement mode silicon gate power

MOSFET is designed for high voltage, high speed power switching

applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers.

FEATURES

* Ultra Low Gate Charge ( typical 19 nC )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability

SYMBOL

1.Gate

3.Source

2.Drain

TO-251

1

TO-220

1

1

TO-220F

1

TO-220F1

1

TO-252

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UF630L-TA3-T

UF630G-TA3-T

TO-220

G

D

S

Tube

UF630L-TF1-T

UF630G-TF1-T

TO-220F1

G

D

S

Tube

UF630L-TF3-T

UF630G-TF3-T

TO-220F

G

D

S

Tube

UF630L-TM3-T

UF630G-TM3-T

TO-251

G

D

S

Tube

UF630L-TN3-R

UF630G-TN3-R

TO-252

G

D

S

Tape Reel

UF630L-TN3-T

UF630G-TN3-T

TO-252

G

D

S

Tube

Note: Pin Assignment: G: Gate D: Drain S: Source