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BD1316L-16-T160-K Datasheet(PDF) 2 Page - Unisonic Technologies |
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BD1316L-16-T160-K Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R204-013.Ca ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage BD136 VCBO -45 V BD138 -60 BD140 -80 Collector-Emitter Voltage BD136 VCEO -45 V BD138 -60 BD140 -80 Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 V Collector Peak Current ICM -3 A Base Current IB -0.5 A Power Dissipation TC≦25℃ TO-126 PD 12.5 W TO-251 15 Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from –20℃~85℃. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-126 θJA 100 ℃ /W TO-251 83 Junction to Case TO-126 θJC 10 ℃ /W TO-251 8.3 ELECTRICAL CHARACTERISTICS (TC=25℃,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Sustaining Voltage BD136 VCEO(SUS) IC =-30mA, IB=0 (Note) -45 V BD138 -60 BD140 -80 Collector Cut-off Current ICBO VCB =-30 V, IE=0 -0.1 μA VCB =-30 V, IE=0, TC = 125°C -10 Emitter Cut- off Current IEBO VEB = -5 V, IC=0 -10 μA DC Current Gain hFE1 VCE=-2V, IC =-5mA, 25 hFE2 VCE=-2V, IC =-0.5A 25 hFE3 VCE=-2V, IC =-150mA 40 250 Collector-Emitter Saturation Voltage VCE(SAT) IC =-0.5A, IB = -0.05A (Note) -0.5 V Base-Emitter Voltage VBE IC =-0.5A, VCE =-2 V (Note) -1 V Note: Pulsed: Pulse duration 300μs, duty cycle 1.5 % ≦ CLASSIFICATION OF hFE3 RANK 6 10 16 RANGE 40~100 63~160 100~250 |
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