S8050

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-013.B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

20

V

Emitter-Base Voltage

5

V

Collector Current

Ic

700

mA

Collector Dissipation(Ta=25°C)

Pc

1

W

Junction Temperature

150

°C

Storage Temperature

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

Ic=100

μA, I

30

V

Collector-Emitter Breakdown Voltage

20

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-Off Current

1

μA

Emitter Cut-Off Current

100

nA

100

120

110

400

DC Current Gain

40

Collector-Emitter Saturation Voltage

0.5

V

Base-Emitter Saturation Voltage

1.2

V

Base-Emitter Saturation Voltage

1.0

V

Current Gain Bandwidth Product

100

MHz

Output Capacitance

9.0

pF

RANK

C

D

E

RANGE

120-200

160-300

280-400