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PZTA45L-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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PZTA45L-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page PZTA44/45 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R207-003.C ABSOLUTE MAXIMUM RATINGS (T A=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage PZTA44 VCBO 500 V PZTA45 400 V Collector-Emitter Voltage PZTA44 VCEO 400 V PZTA45 350 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Collector Dissipation PC 1.2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage PZTA44 BVCBO IC=100μA, IB=0 500 V PZTA45 400 V Collector-Emitter Breakdown Voltage PZTA44 BVCEO IC=1mA, IB=0 400 V PZTA45 350 V Emitter-Base Breakdown Voltage BVEBO IE=100μA, IC=0 6 V Collector Cut-OFF Current PZTA44 ICBO VCB=400V, IE=0 0.1 μA PZTA45 VCB=320V, IE=0 0.1 μA Collector Cut-OFF Current PZTA44 ICES VCE=400V, IB=0 0.5 μA PZTA45 VCE=320V, IB=0 0.5 μA Emitter Cut-OFF Current IEBO VEB=4V, IC=0 0.1 μA DC Current Gain (Note) hFE VCE=10V, IC=1mA 40 VCE=10V, IC=10mA 50 240 VCE=10V, IC=50mA 45 VCE=10V, IC=100mA 40 Collector-Emitter Saturation Voltage VCE(SAT) IC=1mA, IB=0.1mA 0.4 V IC=10mA, IB=1mA 0.5 V IC=50mA, IB=5mA 0.75 V Base-Emitter Saturation Voltage VBE(SAT) IC=10mA, IB=1mA 0.75 V Current Gain Bandwidth Product fT VCE=20V,Ic=10mA, f=100MHz 50 MHz Output Capacitance COB VCB=20V, IE=0, f=1MHz 7 pF Note: Pulse test: Pulse Width<300 μs, Duty Cycle<2% |
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