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LD242 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. LD242
Description  GaAs Infrared Emitter
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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LD242 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
1998-07-15
LD 242
Schaltzeiten,
I
e von 10 % auf 90 % und von
90 % auf 10 %, bei
I
F = 100 mA, RL = 50 Ω
Switching times,
I
e from 10 % to 90 % and
from 90 % to 10 %,
I
F = 100 mA, RL = 50 Ω
t
r, tf
1
µs
Kapazität
Capacitance
V
R = 0 V
C
o
40
pF
Durchlaßspannung
Forward voltage
I
F = 100 mA
I
F = 1 A, tp = 100 µs
V
F
V
F
1.3
(≤ 1.5)
1.9
(≤ 2.5)
V
V
Sperrstrom,
V
R = 5 V
Reverse current
I
R
0.01
(≤ 1)µA
Gesamtstrahlungsfluß
Total radiant flux
I
F = 100 mA, tp = 20 ms
Φ
e
16
mW
Temperaturkoeffizient von I
e bzw. Φe,
I
F = 100 mA
Temperature coefficient of I
e or Φe,
I
F = 100 mA
TC
I
– 0.55
%/K
Temperaturkoeffizient von
V
F, IF = 100 mA
Temperature coefficient of
V
F, IF = 100 mA
TC
V
– 1.5
mV/K
Temperaturkoeffizient von
λ
peak, IF = 100 mA
Temperature coefficient of
λ
peak, IF = 100 mA
TCλ
0.3
nm/K
Kennwerte (
T
A = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit


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