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LD242 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. LD242
Description  GaAs Infrared Emitter
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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LD242 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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LD 242
Semiconductor Group
2
1998-07-15
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op; Tstg
– 40 ... + 80
°C
Sperrspannung
Reverse voltage
V
R
5V
Durchlaßstrom,
T
C = 25 °C
Forward current
I
F
300
mA
Stoßstrom,
τ ≤ 10 µs, D = 0
Surge current
I
FSM
3A
Verlustleistung,
T
C = 25 °C
Power dissipation
P
tot
470
mW
Wärmewiderstand
Thermal resistance
R
thJA
R
thJC
450
160
K/W
K/W
Kennwerte (
T
A = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
I
F = 100 mA, tp = 20 ms
λ
peak
950
nm
Spektraler Bandbreite bei 50 % von
I
max
Spectral bandwidth at 50 % of
I
max
I
F = 100 m A, tp = 20 ms
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ± 40
Grad
deg.
Aktive Chipfläche
Active chip area
A
0.25
mm2
Abmessungen der aktive Chipfläche
Dimension of the active chip area
L
× B
L
× W
0.5
× 0.5
mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip surface to lens top
H
0.3 ... 0.7
mm


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