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AZV831 Datasheet(PDF) 7 Page - BCD Semiconductor Manufacturing Limited

Part No. AZV831
Description  Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier
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Maker  BCDSEMI [BCD Semiconductor Manufacturing Limited]
Homepage  http://www.bcdsemi.com
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AZV831 Datasheet(HTML) 7 Page - BCD Semiconductor Manufacturing Limited

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Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
Nov. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
7
AZV831
3.0V DC Electrical Characteristics
VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Offset Voltage
VOS
0.5
2.5
mV
Input Bias Current
IB
1.0
5.0
pA
Input Offset Current
IOS
2.0
pA
Input Common-mode Voltage Range
VCM
-0.3
3.3
V
VCM=-0.3V to 1.9V
62
80
Common-mode Rejection Ratio
CMRR
VCM=-0.3V to 3.3V
58
75
dB
RL=1kΩ connect to VCC/2,
VO=0.2V to 2.8V
90
110
Large Signal Voltage Gain
GV
RL=10kΩ connect to VCC/2,
VO=0.1V to 2.9V
95
115
dB
Input Offset Voltage Drift
ΔVOS/ΔT
2.0
μV/
°C
VIN=0.5V, RL=1kΩ connect
to VCC/2
20
50
Output Voltage Swing from Rail
VOL/VOH
VIN=0.5V, RL=10kΩ connect
to VCC/2
3
15
mV
Sink
ISINK
VOUT=VCC
50
60
Output Current
Source
ISOURCE VOUT=0V
50
65
mA
Closed-loop Output Impedance
ZOUT
f=10kHz, G=1 (Note 2)
9
Power Supply Rejection Ratio
PSRR
VCC=1.6V to 5.0V, VCM=0.5V
70
80
dB
Supply Current
ICC
VCM<VCC-1V, IOUT=0
70
90
μA
3.0V AC Electrical Characteristics
VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Conditions
Min Typ Max
Unit
Gain Bandwidth Product
GBP
RL=100kΩ
1.0
MHz
Slew Rate
SR
G=1, 2V Step,
CL=100pF, RL=10kΩ
0.40
V/μs
Phase Margin
φM
RL=100kΩ
67
Degrees
Total Harmonic Distortion+Noise
THD+N
f=1kHz, G=1, VIN=1Vpp
RL=10kΩ, CL=100pF
-70
dB
Voltage Noise Density
en
f=1kHz
27
Hz
nV/
Note 2: G is Closed-Loop Voltage Gain.


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