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AP2138N-1.8TRG1 Datasheet(PDF) 6 Page - BCD Semiconductor Manufacturing Limited

Part # AP2138N-1.8TRG1
Description  ULTRA LOW QUIESCENT CURRENT CMOS LDO
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Manufacturer  BCDSEMI [BCD Semiconductor Manufacturing Limited]
Direct Link  http://www.bcdsemi.com
Logo BCDSEMI - BCD Semiconductor Manufacturing Limited

AP2138N-1.8TRG1 Datasheet(HTML) 6 Page - BCD Semiconductor Manufacturing Limited

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ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Preliminary Datasheet
6
Jul. 2011 Rev. 2. 0
BCD Semiconductor Manufacturing Limited
Parameter
Symbol
Value
Unit
Input Voltage
VIN
7.0
V
Enable Input Voltage (AP2139)
VCE
-0.3 to VIN+0.3
V
Lead Temperature
TLEAD
260
oC
Junction Temperature
TJ
150
oC
Storage Temperature Range
TSTG
-65 to 150
oC
ESD (Machine Model)
ESD
350
V
ESD (Human Body Model)
ESD
2000
V
Thermal Resistance (Note 2)
θJA
SOT-23-3
250
oC/W
SOT-23-5
250
SOT-89
165
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-
perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) -
TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
2.5
6.6
V
Operating Ambient Temperature Range
TA
-40
85
oC
Recommended Operating Conditions


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