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AP2138N-1.8TRG1 Datasheet(PDF) 6 Page - BCD Semiconductor Manufacturing Limited |
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AP2138N-1.8TRG1 Datasheet(HTML) 6 Page - BCD Semiconductor Manufacturing Limited |
6 / 23 page ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Preliminary Datasheet 6 Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited Parameter Symbol Value Unit Input Voltage VIN 7.0 V Enable Input Voltage (AP2139) VCE -0.3 to VIN+0.3 V Lead Temperature TLEAD 260 oC Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC ESD (Machine Model) ESD 350 V ESD (Human Body Model) ESD 2000 V Thermal Resistance (Note 2) θJA SOT-23-3 250 oC/W SOT-23-5 250 SOT-89 165 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica- tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem- perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) - TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Absolute Maximum Ratings (Note 1) Parameter Symbol Min Max Unit Input Voltage VIN 2.5 6.6 V Operating Ambient Temperature Range TA -40 85 oC Recommended Operating Conditions |
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