HE8050G-X-AE3-R datasheet(3/4 Pages) UTC

Part #	HE8050G-X-AE3-R

Description	LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 4 page

HE8050

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R211-018,C

TYPICAL CHARACTERISTICS

Static Characteristics

Collector-Emitter Voltage ( V)

0

0.4

0.8

1.2

1.6

2.0

0

0.1

0.2

0.3

0.4

0.5

IB=0.5mA

IB=1.0mA

IB=1.5mA

IB=2.0mA

IB=2.5mA

IB=3.0mA

DC Current Gain

Collector Current, Ic (mA)

10

2

10

1

10

0

10

3

10

3

10

2

10

1

10

0

10

-1

VCE=1V

Current Gain-Bandwidth

Product

Collector Output Capacitance

Collector Current, Ic (mA)

10

0

10

1

10

2

10

3

10

0

10

1

10

2

VCE=10V

Collector-Base Voltage (V)

10

3

10

3

10

0

10

1

10

2

10

0

10

1

10

2

10

3

f=1MHz

IE=0

Base-Emitter on Voltage

10

0

10

1

10

2

10

3

Base-Emitter Voltage (V)

0.2

0.4

0.6

0.8

1.0

1.2

VCE=1V

Collector Current, Ic (mA)

10

3

10

2

10

1

10

0

10

-1

10

1

10

2

10

3

10

4

Saturation Voltage

VBE(SAT)

Ic=10*IB

VCE(SAT)

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