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HE8050L-X-T9N-K Datasheet(PDF) 2 Page - Unisonic Technologies |
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HE8050L-X-T9N-K Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page HE8050 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R211-018,C ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V SOT-23 350 mW SOT-89 500 mW Collector Dissipation TO-92/TO-92NL Pc 1 W Collector Current IC 1.5 A Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100μA,IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA,IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=100μA,IC=0 6 V Collector Cut-Off Current ICBO VCB=35V,IE=0 100 nA Emitter Cut-Off Current IEBO VEB=6V,IC=0 100 nA hFE1 VCE=1V,IC=5mA 45 135 hFE2 VCE=1V,IC=100mA 85 160 500 DC Current Gain hFE3 VCE=1V,IC=800mA 40 110 Collector-Emitter Saturation Voltage VCE(SAT) IC=800mA,IB=80mA 0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=800mA,IB=80mA 1.2 V Base-Emitter Saturation Voltage VBE VCE=1V,IC=10mA 1.0 V Current Gain Bandwidth Product fT VCE=10V,IC=50mA 100 MHz Output Capacitance Cob VCB=10V,IE=0 f=1MHz 9.0 pF CLASSIFICATION of hFE2 RANK C D E RANGE 120-200 160-300 250-500 |
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