5–1

FEATURES

• Identical Channel to Channel Footprint

• Current Transfer Ratio (CTR) Range at

ILD/Q615-1: 40 – 80% Min.

ILD/Q615-2: 63 – 125% Min.

ILD/Q615-3: 100 – 200% Min.

ILD/Q615-4: 160 – 320% Min.

ILD/Q615-1: 13% Min.

ILD/Q615-2: 22% Min.

ILD/Q615-3: 34% Min.

ILD/Q615-4: 56% Min.

• Dual and Quad Packages Feature:

-

Reduced Board Space

-

Lower Pin and Parts Count

-

Better Channel to Channel CTR Match

-

Improved Common Mode Rejection

• Field-Effect Stable by TRIOS (TRansparent IOn

Shield)

• Isolation Test Voltage from Double Molded

• UL Approval #E52744

• VDE #0884 Available with Option 1

Maximum Ratings (Each Channel)

Emitter

Reverse Voltage ................................................ 6 V

Forward Current ........................................... 60 mA

Surge Current .................................................1.5 A

Power Dissipation ...................................... 100 mW

Derate Linearly from 25

°C ...................1.33 mW/°C

Detector

Collector-Emitter Reverse Voltage .................. 70 V

Emitter-Collector Reverse Voltage .................... 7 V

Collector Current .......................................... 50 mA

Collector Current (t <1 ms) .........................100 mA

Power Dissipation ...................................... 150 mW

Derate Linearly from 25

°C........................ 2 mW/°C

Package

Storage Temperature................... –55

°C to +150°C

Operating Temperature ............... –55

°C to +100°C

Junction Temperature.................................... 100

°C

Soldering Temperature

(2 mm distance from case bottom) ........... 260

°C

Package Power Dissipation, ILD615.......... 400 mW

Derate Linearly from 25

°C..................5.33 mW/°C

Package Power Dissipation, ILQ615 ......... 500 mW

Derate Linearly from 25

°C................. 6.67 mW/°C

Creepage ............................................... 7 mm min.

Clearance............................................... 7 mm min.

Isolation Resistance

12

Ω

11

Ω

DESCRIPTION

The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs

IRLED emitters and high gain NPN phototransistors. These devices are con-

structed using over/under leadframe optical coupling and double molded

The binned min./max. and linear CTR characteristics combined with the

TRIOS (TRansparent IOn Shield) field-effect process make these devices

well suited for DC or AC voltage detection. Eliminating the phototransistor

base connection provides added electrical noise immunity from the tran-

sients found in many industrial control environments.

Because of guaranteed maximum non-saturated and saturated switching

characteristics, the ILD/Q615 can be used in medium speed data I/O and

control systems. The binned min./max. CTR specification allow easy worst

case interface calculations for both level detection and switching applica-

tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at

See Appnote 45, “How to Use Optocoupler Normalized Curves.”

Dimensions in inches (mm)

.268 (6.81)

.255 (6.48)

3

4

6

5

.390 (9.91)

.379 (9.63)

.045 (1.14)

.030 (.76)

4

°

Typ.

.100 (2.54) Typ.

10

° Typ.

3

°–9°

.305 Typ.

(7.75) Typ.

.022 (.56)

.018 (.46)

.012 (.30)

.008 (.20)

.135 (3.43)

.115 (2.92)

1

2

8

7

Pin One I.D.

.150 (3.81)

.130 (3.30)

.040 (1.02)

.030 (.76 )

1

2

3

4

8

7

6

5

Collector

Emitter

Collector

Emitter

Anode

Cathode

Anode

Cathode

Collector

Emitter

Collector

Emitter

Collector

Emitter

Collector

Emitter

Anode

Cathode

Anode

Cathode

Anode

Cathode

Anode

Cathode

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

.268 (6.81)

.255 (6.48)

.790 (20.07)

.779 (19.77 )

.045 (1.14)

.030 (.76)

4

°

Typ.

.100 (2.54) Typ.

10

° Typ.

3

°–9°

.305 Typ.

(7.75) Typ.

.022 (.56)

.018 (.46)

.012 (.30)

.008 (.20)

.135 (3.43)

.115 (2.92)

Pin

One

I.D.

.150 (3.81)

.130 (3.30)

.040 (1.02)

.030 (.76 )

DUAL CHANNEL

ILD615

QUAD CHANNEL

ILQ615

PHOTOTRANSISTOR OPTOCOUPLER