5N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-483.d

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Drain-Gate Voltage

800

V

Continuous

5.5

A

Drain Current (Continuous)

Pulsed (Note 2)

20

A

Avalanche Energy

Single Pulsed (Note 3)

320

mJ

TO-220

125

Power Dissipation

TO-220F /TO-220F1

40

W

TO-220

1

Derating Factor

TO-220F /TO-220F1

0.32

W/°C

Junction Temperature

150

°C

Storage Temperature

-55~150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

TO-220

1

Junction to Case

TO-220F /TO-220F1

3.12

°C/W