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5N80_1108 Datasheet(PDF) 2 Page - Unisonic Technologies |
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5N80_1108 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 5N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-483.d ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VGS=0 VDS 800 V Gate-Source Voltage VGS ±30 V Drain-Gate Voltage RGS=20kΩ VDGR 800 V Continuous ID 5.5 A Drain Current (Continuous) Pulsed (Note 2) IDM 20 A Avalanche Energy Single Pulsed (Note 3) EAS 320 mJ TO-220 125 Power Dissipation TO-220F /TO-220F1 PD 40 W TO-220 1 Derating Factor TO-220F /TO-220F1 0.32 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, ID=IAR, VDD=50V THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W TO-220 1 Junction to Case TO-220F /TO-220F1 θJC 3.12 °C/W |
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