4N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-525.c

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

4

A

Drain Current

Pulsed (Note 3)

16 (Note 2)

A

Avalanche Current (Note 3)

4

A

Single Pulsed (Note 4)

216

mJ

Avalanche Energy

Repetitive (Note 3)

8.5

mJ

Peak Diode Recovery dv/dt (Note 5)

dv/dt

4.5

V/ns

TO-220

85

TO-220F

28

Power Dissipation

TO-252

52

W

TO-220

0.67

TO-220F

0.22

Derate above 25°C

TO-252

0.41

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

TO-220F

62.5

Junction to Ambient

TO-252

110

°C/W

TO-220

1.47

TO-220F

4.5

Junction to Case

TO-252

2.4

°C/W